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SMD Schottky Barrier Diode
SMD Diodes Specialist
CDBF0520L-HF
IO = 500 mA VR = 20 Volts
(RoHS Device)
Features
Halogen free. Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction.
1005(2512)
0.102(2.60) 0.095(2.40)
0.051(1.30) 0.043(1.10)
Mechanical data
Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BM Mounting position: Any Weight: 0.006 gram(approx.).
0.040(1.00) Typ. 0.020(0.50) Typ.
0.035(0.90) 0.027(0.70)
0.012 (0.30) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25 C unless otherwise noted)
O
Parameter
Peak reverse voltage Reverse voltage Average forward rectified current Forward current,surge peak Storage temperature Junction temperature
Conditions
Symbol Min Typ Max Unit
VRM VR IO 20 20 0.5 5.5 -40 -40 +125 +125 V V A A
O
8.3 ms single half sine-wave superimposed on rate load (JEDEC method)
IFSM TSTG Tj
C C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
O
Parameter
Forward voltage IF = 100mA IF = 500mA IF = 100mA IF = 500mA
Conditions
@Ta = 25 C @Ta = 25 C @Ta = 100 C @Ta = 100 C
O O O O
Symbol Min Typ Max Unit
VF 300 385 220 330 75 250 170 22 mV
Reverse current Capacitance between terminals Reverse recovery time
VR = 10V @Ta = 25 OC VR = 20V @Ta = 25 C f = 1 MHz, and 0 VDC reverse voltage IF = IR = 10mA, Irr x IR, RL = 100ohm
O
IR CT Trr
uA pF ns
REV:A
QW-G1093
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBF0520L-HF)
Fig. 1 - Forward characteristics
1000
Fig. 2 - Reverse characteristics
100m
75 C
Forward current (mA )
100
C
Reverse current ( A )
10m
1m
125
C
75
C
-2 5
25
C
10
100u
25 C
10u
-25 C
1
1u 0.1u
0.1 0.2 0.3 0.4 0.5 0.6
0.1 0.0
10
20
30
Forward voltage (V)
Reverse voltage (V)
Fig. 3 - Capacitance between terminals characteristics
Capacitance between terminals(pF)
120
Fig. 4 - Current derating curve
120
Average forward current ( % )
f=1MHz Ta = 25 C
100
100
80
80
60
60
40
40
20
20
0 0 5 10 15 20
0
0
25
50
75
100
125
150
Reverse voltage : (V)
Ambient temperature ( C )
REV:A
QW-G1093
Page 2
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Reel Taping Specification
P0 P1 d Index hole E T
F B
Polarity
W C
P
A
12 0
o
D2
D1 D
W1
Trailer ....... .......
10 pitches (min)
Device ....... ....... ....... .......
Leader ....... .......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.55 0.10
0.061 0.004
B
2.65 0.10
0.104 0.004
C
1.05 0.10
0.041 0.004
d
1.55 0.05
0.061 0.002
D
178 1
7.008 0.04
D1
60.0 MIN.
2.362 MIN.
D2
13.0 0.20
0.512 0.008
F/1005
(mm) (inch)
SYMBOL
E
1.75 0.10
0.069 0.004
F
3.50 0.05
0.138 0.002
P
4.00 0.10
0.157 0.004
P0
4.00 0.10
0.157 0.004
P1
2.00 0.05
0.079 0.004
T
0.23 0.05
0.009 0.002
W
8.00 0.20
0.315 0.008
W1
13.5 MAX.
0.531 MAX.
F/1005
(mm) (inch)
REV:A
QW-G1093
Page 3
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
SMD Diodes Specialist
Marking Code
Park Number CDBF0520L-HF Marking Code
BM
BM
Suggested PAD Layout
F/1005 SIZE (mm) A B C D E 2.10 1.20 1.20 3.30 0.90 (inch) 0.083 0.047 0.047
C D A E
0.130
B
0.035
Standard Package
Qty per Reel Case Type (Pcs) F/1005 4000 Reel Size (inch) 7
REV:A
QW-G1093
Page 4
Comchip Technology CO., LTD.

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